ABSTRACT
In this chapter, an overview of the present state-of-the-art compact models for common multigate fin field-effect transistor (FinFET) devices is presented. The device model includes a core model for large geometry devices and models for short-channel devices to accurately analyze the physical and geometrical effects on real devices. The model includes current-voltage and capacitance-voltage formulations for FinFET devices. Finally, process variability is formulated to estimate the effect of dopant fluctuations in FinFET devices. This chapter is intended to provide readers the present state-of-the-art modeling activities in FinFET devices.
