ABSTRACT
Undoubtedly, FinFET technology is the slogger of today's semiconductor world. However, the demand for further scaling with a desire for ultra-low-power and high-speed applications results in undesired short-channel effects, where new transistors are required for the next generation. Thanks to science and technological innovation, the GAA (gate-all-around) FET family brings together different transistors and their competitive benefits. This chapter tries to answer why and how 3D devices emerge for the future computing paradigm. In addition to the limitation of FinFET, it further discusses the scope and challenges of different members of the GAAFET family, viz. nFET, nanosheet FET, junctionless nanosheet FET, complementary FET, and forksheet FET.
