Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

MBE growth of III-V nitrides is being studied at NCSU using GaN buffer layers on SiC prepared by MOVPE as substrates. Nitrogen rf plasma sources are being used for the generation of active nitrogen. The MBE-grown GaN films exhibit remarkably intense photo-luminescence (PL) dominated by a sharp band-edge peak at 3.409 eV having a FWHM of 33 meV at 300K. No deep level emission is observed. AlGaN and InGaN films and quantum well structures have also been prepared. GaN/InGaN single-quantum-well structures exhibit electroluminescence at 300K peaked in the blue-violet to the green spectral region, depending on In content.