ABSTRACT
High-magnetic field transport is studied in the series of quantum-well-wire structures AlAs/GaAs/AlAs obtained by the multilayered MBE growth on the GaAs(311)A surface. For the average GaAs layer thicknesses higher than 1.8 nm considerable difference is found at low temperatures in zero-field conductances parallel and perpendicular to the wires while the corresponding low-temperature high-field dependencies of the Hall resistance are quite similar. Several plateaus of the quantum Hall effect are observed concomitant with the magnetoresistance minima. The plateau at highest fields is within several percent at 25kOhm indicating the filling factor v=1 for the two-dimensional conductivity. But the next distinct plateau is around v=2.5 that imply some parallel conductivity, probably of one-dimensional nature.
