ABSTRACT
We recently demonstrated a novel type of InGaAs(P)/InP SCMQW (separate confinement multiple quantum well) structure, which was designed for low-power all-optical switching in the 1.55 µm wavelength region [1]. Photogenerated holes accumulate at an additional hetero-barrier, which leads to a field increase in the quantum wells. The resulting red-shift of the bandedge due to the QCSE (quantum confined Stark effect) is used for optical switching. The field enhancement is characterised at different bias voltages, input powers, barrier heights and temperatures.
