ABSTRACT
III-V mid-infrared lasers: traditional InAsSb/InAsSbP double heterostructures and novel tunnelling injection lasers based on type II broken-gap GaInAsSb/InAs heterojunction are considered. Problems of Auger-recombination suppression and room temperature operation of the lasers are discussed. A theoretical and experimental study of threshold current temperature dependence is presented and a comparative study of limiting operation temperature for traditional and non-traditional laser designs is performed. The presented results open the way for III-V mid-infrared lasers to operate at room temperature.
