ABSTRACT
Large-signal transient behavior of the base widening in AlGaAs/GaAs HBTs is considered in the presence of the transferred-eiectron effect. The similarity between threshold conditions for Kirk effect and Gunn phenomenon leads to their close interaction at high current density. Under transient conditions the transferred-eiectron effect precedes the base widening thus altering its dynamics and device switching characteristics. Numerical simulations show formation of a transferred-eiectron induced charge domain in the collector drift region ahead of the widening base. A significant reduction of the current switching time due to this process is predicted.
