ABSTRACT
The paper presents the results on application of Liquid Phase Epitaxy (LPE) for the high-efficiency AlGaAs/GaAs heterostructure solar cells (SCs). The reduction of the growth temperature down to 450–550°C has provided the crystallisation of ultrathin (2–20 nm) AIGaAs layers. Efficiencies as high as 24.0–24.7% under AMO conditions at concentration ratio of 20–100x and 27.5 % under outdoor conditions at concentration ratio of 140x have been reached for the single-junction SCs. The results of investigation two-junction two-terminal AlGaAs/GaAs cascaded SCs with connecting tunnel junction grown by LPE and additional gas phase Zn diffusion are reported as well.
