ABSTRACT
GaN and its related III-nitride with outstanding optoelectronic properties are suitable for the fabrication of Light-Emitting Diodes (LEDs), laser diodes, etc. So far, GaN-based LEDs prepared on sapphire substrates have been commercialized. However, due to the lack of large size and low thermal conductivity of sapphire, it hampers the further development of high-power low-cost GaN-based LEDs. In this regard, Si substrate which has superior properties, such as high thermal conductivity, available of large size, etc. is a promising candidate for the fabrication of high-power lowcost GaN-based LED devices. This chapter focuses on the recent progress of the fabrication of GaN-based LEDs on Si substrates. The perspectives for the fabrication of highly-efficient LEDs on Si substrates are also discussed.
